TopWave 405

High-stability, single frequency laser

Activate innovation with the next generation laser for lithography and holography

TopWave 405

High-stability, single frequency laser

The TopWave 405 series was designed to provide a modern, "green” alternative to replace the bulky and power-hungry Krypton ion (406.7 nm and 413.1 nm) gas lasers still commonly used in lithographic and holographic applications.
With up to 2 W at 405nm, a coherence length well beyond 100 m, M² = 1.15 (typ.) and it's push-a-button operation the TopWave 405 combines power and precision with ease of use.
Tested for thousands of hours, the industrial design offers consistent performance and long-term reliability required for 24/7 operation with maximum up-time. Being an “all-semiconductor” laser, the TopWave 405 draws less than 200 W and does not require water-cooling resulting in a low cost of ownership and minimize environmental footprint.

Your Benefits

Unique power at 405 nm

Up to 2 W of optical power at 405 nm from an all-semiconductor laser.

Highly coherent

Single frequency operation with coherence length >>100 m, ideal for interferometric pattern generation.

Reliable

A robust industrial laser design delivering consistent 24/7 performance at 405 nm.

Low cost of ownership

Higher electrical efficiency than comparable gas lasers, no water cooling required.

Replace your krypton Ion laser

Designed to match gas laser parameters, making system integration a breeze.

Compact & ready to use

A compact, turnkey laser system with minimal installation effort.

Applications

Holography & augmented reality

Light-field recording with phase information, for recording of patterns and pseudo-3D images. Coherent diode lasers at 407 nm, 457 nm, 514 nm, 647 nm or other wavelengths in the RGB region, and even in the UV region with power levels of several 100 mW have become the optimal choice for holography – especially in industrial applications. Whereas the original sources were bulky and operated at a fixed wavelength, diode lasers are tunable, so they perfectly match the user requirements.

Interference lithography

High coherence, minimum frequency drift and excellent beam quality are key for generating micro and nanostructures via interference lithography. Watt-level laser power enable processing large area substrates with highest quality outcome and significantly reduces exposure times.

Laser based mask writing

Cost-efficient lithography process in which a focused laser beam directly writes precise features without using a physical reticle, enabling high accuracy and flexibility in semiconductor mask fabrication. Wavelengths around 400 nm are used to take advantage of well-established i-line photoresists. Using lasers at 405nm minimum linewidths of 500nm and CD uniformities < 15 nm can be achieved.

Maskless lithography & laser direct writing

In modern microlithographic systems compact violet and UV diode lasers have taken the place of bulky gas lasers or HeCd lasers. The superior performance of diode lasers enable improved up-times, lower cost of ownership and qualities of written features, which haven’t been imagined before this paradigm shift.