Core components of TeraFlash pro and TeraFlash smart
Pulsed terahertz generation with leading-edge technology: InGaAs antennas provide up to 400 µW power and a bandwidth of 6 THz. The emitter and detector modules, developed by Fraunhofer Heinrich-Hertz Institute (Berlin/Germany), are packaged with a Silicon lens and SM/PM fiber and can be flexibly positioned in transmission or reflection experiments.
Specifications
Photoconductive Switches
Terahertz emitter
InGaAs/InP photoconductive switch with strip-line antenna
Terahertz receiver
InGaAs/InP photoconductive switch with dipole antenna
Emitter / receiver bandwidth
6 THz
Semiconductor material
Multi-layer structure of InGaAs and InAIAs on InP
Wavelength
1.5 µm
Average terahertz power
Typ. 70 µW @ 20 mW laser power
Package
Cylindrical, integrated Si lens and SM/PM fiber pigtail Emitter / receiver modules: Ø 25 mm, 34 mm length
Recommended operating conditions
Laser power 20 mW average Max. bias +100 V (unipolar, emitter), ± 3 V (receiver, only for testing)